Products
We introduce high-performance CVD SiC for semiconductor Etch processes.
HOMEProductsCVD SiC
CVD SiC
SiC Ring
Re-growth / Bulk
Shower Head
Dummy Wafer
CVD SiC Features
Based on high-purity characteristics, it minimizes contamination and effectively dissipates heat with high thermal conductivity.
In addition, its low coefficient of thermal expansion maintains excellent dimensional stability under temperature changes, and its high hardness and strength provide outstanding wear resistance and durability.
| NO | Properties | Values |
|---|---|---|
| 1 | Purity | 6N |
| 2 | Density (g/cm3) | 3.21 |
| 3 | Thermal Conductivity (W/m*K) | 200~400 |
| 4 | Thermal Expansion (10-6/°C) | 3.25~4.5 |
| 5 | Hardness (kg/mm²) | >2800 |
| 6 | Flexural Strength (Mpa) | 500 |
| 7 | Volume Resistivity (Ω·cm) | Low resistivity <1, Medium resistivity 1~25, High resistivity >500 |
| 8 | Crystal Structure | 3C-SiC |
Copyright wycom Inc. All Rights reserved. Designed by WebSite.co.kr